PECVD350 Plasma Enhanced Chemical Vapor Deposition (PEVCD) Leadmed
PECVD350 Plasma Enhanced Chemical Vapor Deposition (PECVD). The films typically deposited using PECVD are silicon nitride (SixNy), silicon dioxide (SiO2), silicon oxy-nitride (SiOxNy), silicon carbide (SiC), and amorphous silicon (a-Si).
PECVD350 Plasma Enhanced Chemical Vapor Deposition (PEVCD) Leadmed
Application
The films typically deposited using PECVD are silicon nitride (SixNy), silicon dioxide (SiO2), silicon oxy-nitride (SiOxNy), silicon carbide (SiC), and amorphous silicon (a-Si).
Technical Performace
Model | PECVD350 | |
vacuum chamber size | 304SS, Ø350 mm, vertical top loading | |
Vacuum system configuration | Molecular pump+ mechanical pump; | |
Pressure limited | Better than 5.0x10-5Pa; leak rate ≤1x10-7PaL/s | |
Recover to vacuum state time | 5x10-4Pa less than 30 minutes (Do pumping by filled with dry nitrogen when system exposed in the air) | |
Magnetron sputtering components | 3’’ targets; 1 magnetron target; | |
Power supply: DC500W, 1 set | ||
Sample heating platform | Sample size | Max. 6’’ sample, 1pc; 20-60mm distance can be adjusted continuously |
revolution | 60 rpm | |
heating | Max.600℃ | |
baffle | no | |
Gas channel | 4 sets MFC control 4 gas channel( process gas need be prepared by user); single suction: SiH4,H2,N2O,NH3 | |
Cooling water nozzle | 1’’ thread pipe | |
Radio-frequency power supply | RF1000W,13.56MHz | |
Control system | Touch screen+PLC control system | |
Components | Deposition chamber revolution sample holder light heating system gas circuit pumping system control system installation platform | |
Power Supply | Max. 25Kw/AC380V | |
Floor Space(mm) | ||
Packing | Wooden box | |
PECVD350 Plasma Enhanced Chemical Vapor Deposition (PEVCD) Leadmed
We are very professional on this PECVD machines, and it is very popular in universities and laboratories.
system design is very flexible, if you are interested to be our agent, contact me freely!
TAG: PECVD Plasma Enhanced Chemical Vapor Deposition