Main sputtering chamber size

Ø450D

Process chamber

Ø150×L300 mm

Vacuum system configuration

Main sputtering chamber

Molecular pump+ mechanical pump+gate valve

Process chamber

mechanical pump

Pressure limited

Main sputtering chamber

Better than 5×10-5Pa; leak rate ＜1×10-7PaL/S

Process chamber

Better than 5×10-1Pa

Recover to vacuum state time

Main sputtering chamber

2.0×10-4Pa within 30 minutes ( sample changed finished and vacuum degree is 5.0×10-1Pa, then do pumping)

Process chamber

5×10-1Pa within 10 minutes ( when system begins do pumping )

Magnetron sputtering components

3’’ targets;

1 strong target, 2 standard targets;

compatible of DC, MF and RF;

indirect water cooling connection;

DC500W, 2 sets; 1 sets RF500W( auto-match)

Sample heating platform

Sample size

Ø120mm

revolution

Z lifting +Z rotation, Z spindle: 60 rpm

heating

Max. 500℃

Negative bias

NO

baffle

Electric baffle

Gas circuit

Molecular pump+ mechanical pump, 3 way gas, Ar, N2, O2 

Cooling water nozzle

1’’ thread pipe

Film thickness monitor

Frequency resolution 0.03Hz;

Speed resolution0.1A/S;  

Film thickness resolution 0.1A;

Optional components

Sample injection chamber

 no

Sample Injection chamber anti-sputtering target

With Plasma cleaning function

Sample Injection chamber annealing furnace

no

Electric control system

Touch screen+PLC control system

Components

Sputtering chamber, revolution sample holder, light heating system, quartz crystal vibration film thickness monitor, gas circuit, pumping system, control system, installation platform. suitable for ultra clean room installation.

Power Supply

Max. 5Kw/AC380V

Floor Space(mm)

L5000xW1000xH2000mm

Packing

Wooden box